| PART |
Description |
Maker |
| M5M51016BRT-10L-I M5M51016BRT-10LL-I M5M51016BRT-7 |
1048576-BIT(65536-WORD BY 16-BIT)CMOS STATIC RAM 1048576位（65536字由16位）的CMOS静态RAM
From old datasheet system
1048576-1048576-BIT CMOS STATICRAM
1048576-BIT(65536-WORD BY 16-BIT) CMOS STATIC RAM
|
Mitsubishi Electric, Corp.
MITSUBISHI[Mitsubishi Electric Semiconductor]
Mitsubishi Electric Corporation
|
| HM6287 HM6287P HM6287LP |
65536-word x 1-bit Speed CMOS Static RMA
|
Hitachi,Ltd.
|
| CXK5B18120TM-12 |
65536-word x 18-bit High Speed Bi-CMOS Static RAM
|
SONY
|
| CXK5V8512TM- CXK5V8512TM-10LLX CXK5V8512TM-85LLX |
65536-word X 8-bit High Speed CMOS Static RAM
65536-word X 8-bit High Speed CMOS Static RAM 65536字8位高速CMOS静态RAM
|
SONY[Sony Corporation]
Sony, Corp.
|
| CXK5T16100TM- CXK5T16100TM-12LLX CXK5T16100TM |
128 x 64 pixel format, LED Backlight available
65536-word x 16-bit High Speed CMOS Static RAM
|
SONY[Sony Corporation]
|
| M5M51016BRT-12VL-I M5M51016BRT-12VLL-I M5M51016BTP |
Octal D-Type Transparent Latches With 3-State Outputs 20-TSSOP -40 to 85
From old datasheet system
1048576-BIT CMOSSTATIC RAM
1048576-BIT(65536-WORD BY 16-BIT)CMOS STATIC RAM
|
MITSUBISHI[Mitsubishi Electric Semiconductor]
Mitsubishi Electric Corporation
|
| M6MGT331S4BKT M6MGB331S4BKT |
33,554,432-BIT (2,097,152 - WORD BY 16-BIT/4,194,304-WORD BY 8-BIT) CMOS 3.3V-ONLY FLASH MEMORY & 4,194,304-BIT (262,144-WORD BY 16-BIT/524,288-WORD B
|
Renesas Electronics Corporation
|
| HM6709 |
65536-WORD X 4-BIT HIGH SPEED STATIC RAM (WITH OE)
|
Hitachi,Ltd.
|
| GM71C4256A GM71C4256A-10 GM71C4256A-60 GM71C4256A- |
262144 word x 4 Bit CMOS DRAM
262,144 WORD x 4 BIT CMOS DYNAMIC RAM
|
GoldStar
LG[LG Semicon Co.,Ltd.]
|
| HN62408 HN62408FP HN62408P |
524288-WORD X 16-BIT/1048576-WORD X 8-BIT CMOS MASK PROGRAMMABLE ROM 524288字16-BIT/1048576-WORD × 8位CMOS掩膜可编程ROM
|
Hitachi,Ltd.
Hitachi Semiconductor
|
| UPD27C1024A |
65536 x 16-Bit CMOS UV EPROM
|
NEC Electronics
|
